FQA13N8

FQA13N80-F109 vs FQA13N80

 
PartNumberFQA13N80-F109FQA13N80
DescriptionMOSFET TO-3P N-CH 600VMOSFET TO-3P N-CH 600V
ManufacturerON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-3PN-3TO-3PN-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage800 V800 V
Id Continuous Drain Current12.6 A12.6 A
Rds On Drain Source Resistance750 mOhms750 mOhms
Vgs Gate Source Voltage30 V30 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation300 W300 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameQFET-
PackagingTubeTube
Height20.1 mm20.1 mm
Length16.2 mm16.2 mm
SeriesFQA13N80_F109-
Transistor Type1 N-Channel1 N-Channel
Width5 mm5 mm
BrandON Semiconductor / FairchildON Semiconductor / Fairchild
Fall Time110 ns110 ns
Product TypeMOSFETMOSFET
Rise Time150 ns150 ns
Factory Pack Quantity45030
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time155 ns155 ns
Typical Turn On Delay Time60 ns60 ns
Part # AliasesFQA13N80_F109FQA13N80_NL
Unit Weight0.225789 oz0.000198 oz
Type-MOSFET
Forward Transconductance Min-13 S
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQA13N80-F109 MOSFET TO-3P N-CH 600V
FQA13N80 MOSFET TO-3P N-CH 600V
ON Semiconductor
ON Semiconductor
FQA13N80 MOSFET N-CH 800V 12.6A TO-3P
FQA13N80-F109 MOSFET N-CH 800V 12.6A TO-3P
FQA13N80 F109 New and Original
FQA13N80,13N80, New and Original
FQA13N80C New and Original
FQA13N80Q New and Original
FQA13N80_F109 Darlington Transistors MOSFET TO-3P N-CH 600V
FQA13N80-- New and Original
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