PartNumber | FQA19N60 | FQA19N60,FQA19N60C,19N60 | FQA19N60C |
Description | MOSFET 600V N-CH QFET | ||
Manufacturer | ON Semiconductor | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-3PN-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 600 V | - | - |
Id Continuous Drain Current | 18.5 A | - | - |
Rds On Drain Source Resistance | 380 mOhms | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 300 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | QFET | - | - |
Packaging | Tube | - | - |
Height | 20.1 mm | - | - |
Length | 16.2 mm | - | - |
Series | FQA19N60 | - | - |
Transistor Type | 1 N-Channel | - | - |
Type | MOSFET | - | - |
Width | 5 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Forward Transconductance Min | 16 S | - | - |
Fall Time | 135 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 210 ns | - | - |
Factory Pack Quantity | 450 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 150 ns | - | - |
Typical Turn On Delay Time | 65 ns | - | - |
Part # Aliases | FQA19N60_NL | - | - |
Unit Weight | 0.225789 oz | - | - |