FQA19N6

FQA19N60 vs FQA19N60,FQA19N60C,19N60 vs FQA19N60C

 
PartNumberFQA19N60FQA19N60,FQA19N60C,19N60FQA19N60C
DescriptionMOSFET 600V N-CH QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-3PN-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current18.5 A--
Rds On Drain Source Resistance380 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameQFET--
PackagingTube--
Height20.1 mm--
Length16.2 mm--
SeriesFQA19N60--
Transistor Type1 N-Channel--
TypeMOSFET--
Width5 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min16 S--
Fall Time135 ns--
Product TypeMOSFET--
Rise Time210 ns--
Factory Pack Quantity450--
SubcategoryMOSFETs--
Typical Turn Off Delay Time150 ns--
Typical Turn On Delay Time65 ns--
Part # AliasesFQA19N60_NL--
Unit Weight0.225789 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQA19N60 MOSFET 600V N-CH QFET
ON Semiconductor
ON Semiconductor
FQA19N60 MOSFET N-CH 600V 18.5A TO-3P
FQA19N60,FQA19N60C,19N60 New and Original
FQA19N60C New and Original
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