FQA38

FQA38N30 vs FQA38N30(38N30) vs FQA38N30(SG)

 
PartNumberFQA38N30FQA38N30(38N30)FQA38N30(SG)
DescriptionMOSFET 300V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-3PN-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage300 V--
Id Continuous Drain Current38.4 A--
Rds On Drain Source Resistance85 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation290 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height20.1 mm--
Length16.2 mm--
SeriesFQA38N30--
Transistor Type1 N-Channel--
TypeMOSFET--
Width5 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min24 S--
Fall Time190 ns--
Product TypeMOSFET--
Rise Time430 ns--
Factory Pack Quantity450--
SubcategoryMOSFETs--
Typical Turn Off Delay Time170 ns--
Typical Turn On Delay Time80 ns--
Part # AliasesFQA38N30_NL--
Unit Weight0.225789 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQA38N30 MOSFET 300V N-Channel QFET
FQA38N30(38N30) New and Original
FQA38N30(SG) New and Original
FQA38N30,38N30 New and Original
FQA38N30C New and Original
FQA38N40 New and Original
ON Semiconductor
ON Semiconductor
FQA38N30 IGBT Transistors MOSFET 300V N-Channel QFET
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