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FQA8N

FQA8N100C vs FQA8N1000C vs FQA8N80

 
PartNumberFQA8N100CFQA8N1000CFQA8N80
DescriptionMOSFET 1000V N-Channe MOSFETMOSFET 800V N-Channel QFET Q-FET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-3PN-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage1 kV--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance1.45 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation225 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameQFET--
PackagingTube--
Height20.1 mm--
Length16.2 mm--
SeriesFQA8N100C--
Transistor Type1 N-Channel--
TypeMOSFET--
Width5 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min8 S--
Fall Time80 ns--
Product TypeMOSFET--
Rise Time95 ns--
Factory Pack Quantity450--
SubcategoryMOSFETs--
Typical Turn Off Delay Time122 ns--
Typical Turn On Delay Time50 ns--
Unit Weight0.225789 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild 		FQA8N100C MOSFET 1000V N-Channe MOSFET
FQA8N90C-F109 MOSFET 900V N-Channel
FQA8N90C MOSFET 900V N-Channel Q-FET
FQA8N1000C New and Original
FQA8N80 MOSFET 800V N-Channel QFET Q-FET
FQA8N80,FQA8N80C New and Original
FQA8N80_F109 MOSFET 800V N-Channel
FQA8N90 New and Original
FQA8N90C_F109 900V N-CHANNEL MOSFET QFET&#17
ON Semiconductor
ON Semiconductor 		FQA8N100C MOSFET N-CH 1000V 8A TO-3P
FQA8N80C MOSFET N-CH 800V 8.4A TO-3P
FQA8N80C_F109 MOSFET N-CH 800V 8.4A TO-3P
FQA8N90C MOSFET N-CH 900V 8A TO-3P
FQA8N90C-F109 MOSFET N-CH 900V 8A TO-3P
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