 |  |  | |
| PartNumber | FQAF28N15 | FQAF22P10 | FQAF27N25 |
| Description | MOSFET N-CH/250V/21.5A/0.085OHM | MOSFET P-CH 100V 16.6A TO-3PF | Power Field-Effect Transistor, 19A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-3PN-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Id Continuous Drain Current | 22 A | - | - |
| Rds On Drain Source Resistance | 90 mOhms | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 102 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 20.1 mm | - | - |
| Length | 16.2 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 115 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 180 ns | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 100 ns | - | - |
| Typical Turn On Delay Time | 17 ns | - | - |
| Unit Weight | 0.000194 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQAF28N15 | MOSFET N-CH/250V/21.5A/0.085OHM | |
ON Semiconductor |
FQAF22P10 | MOSFET P-CH 100V 16.6A TO-3PF | |
| FQAF28N15 | MOSFET N-CH 150V 22A TO-3PF | ||
| FQAF27N25 | Power Field-Effect Transistor, 19A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |