FQAF6N

FQAF6N90 vs FQAF6N80 vs FQAF6N70

 
PartNumberFQAF6N90FQAF6N80FQAF6N70
DescriptionMOSFET 900V N-Channel QFETMOSFET 800V N-Channel QFET
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-3PN-3TO-3PN-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage900 V800 V-
Id Continuous Drain Current4.5 A4.4 A-
Rds On Drain Source Resistance1.9 Ohms1.95 Ohms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation96 W90 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height20.1 mm20.1 mm-
Length16.2 mm16.2 mm-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width5 mm5 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Fall Time55 ns45 ns-
Product TypeMOSFETMOSFET-
Rise Time80 ns70 ns-
Factory Pack Quantity30360-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time95 ns65 ns-
Typical Turn On Delay Time35 ns30 ns-
Unit Weight0.000194 oz0.000194 oz-
Forward Transconductance Min-5.5 S-
Part # Aliases-FQAF6N80_NL-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQAF6N90 MOSFET 900V N-Channel QFET
FQAF6N80 MOSFET 800V N-Channel QFET
FQAF6N70 New and Original
ON Semiconductor
ON Semiconductor
FQAF6N80 MOSFET N-CH 800V 4.4A TO-3PF
FQAF6N90 MOSFET N-CH 900V 4.5A TO-3PF
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