FQB13N1

FQB13N10LTM vs FQB13N10 vs FQB13N10L

 
PartNumberFQB13N10LTMFQB13N10FQB13N10L
DescriptionMOSFET 100V N-Ch QFET Logic Level
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current12.8 A--
Rds On Drain Source Resistance142 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3.75 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min9.5 S--
Fall Time72 ns--
Product TypeMOSFET--
Rise Time220 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time22 ns--
Typical Turn On Delay Time7.5 ns--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB13N10LTM MOSFET 100V N-Ch QFET Logic Level
FQB13N10 New and Original
FQB13N10L New and Original
FQB13N10LTM-NL New and Original
ON Semiconductor
ON Semiconductor
FQB13N10LTM MOSFET N-CH 100V 12.8A D2PAK
FQB13N10TM MOSFET N-CH 100V 12.8A D2PAK
Top