FQB14N

FQB14N15TM vs FQB14N10 vs FQB14N30

 
PartNumberFQB14N15TMFQB14N10FQB14N30
DescriptionMOSFET N-CH/150V/14.4A/0.21OHM
ManufacturerON Semiconductor-FAIRCHILD
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-MOSFET (Metal Oxide)
Mounting StyleSMD/SMT--
Package / CaseTO-263-3-TO-263-3, DPak (2 Leads + Tab), TO-263AB
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage150 V--
Id Continuous Drain Current14 A--
Rds On Drain Source Resistance210 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3.75 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel-Tape & Reel (TR)
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Fall Time65 ns--
Product TypeMOSFET--
Rise Time90 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time7.2 ns--
Unit Weight0.011640 oz--
Series--QFET
Part Status--Obsolete
FET Type--N-Channel
Drain to Source Voltage (Vdss)--300V
Current Continuous Drain (Id) @ 25°C--14.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)--10V
Vgs(th) (Max) @ Id--5V @ 250A
Gate Charge (Qg) (Max) @ Vgs--40nC @ 10V
Vgs (Max)--±30V
Input Capacitance (Ciss) (Max) @ Vds--1360pF @ 25V
FET Feature---
Power Dissipation (Max)--3.13W (Ta), 147W (Tc)
Rds On (Max) @ Id, Vgs--290 mOhm @ 7.2A, 10V
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--DPAK (TO-263AB)
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB14N15TM MOSFET N-CH/150V/14.4A/0.21OHM
FQB14N30TM MOSFET 300V N-Channel QFET
FQB14N10 New and Original
FQB14N30 New and Original
FQB14N30 SMK1430DI New and Original
ON Semiconductor
ON Semiconductor
FQB14N30TM MOSFET N-CH 300V 14.4A D2PAK
FQB14N15TM MOSFET N-CH 150V 14.4A D2PAK
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