PartNumber | FQB19N20LTM | FQB19N20CTM | FQB19N10TM |
Description | MOSFET 200V N-Ch QFET Logic Level | MOSFET 200V N-Channel Adv Q-FET C-Series | MOSFET 100V N-Channel QFET |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | E | E |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 200 V | 200 V | 100 V |
Id Continuous Drain Current | 21 A | 19 A | 19 A |
Rds On Drain Source Resistance | 140 mOhms | 170 mOhms | 100 mOhms |
Vgs Gate Source Voltage | 20 V | 30 V | 25 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
Pd Power Dissipation | 3.13 W | 3.13 W | 3.75 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Height | 4.83 mm | 4.83 mm | 4.83 mm |
Length | 10.67 mm | 10.67 mm | 10.67 mm |
Series | FQB19N20L | FQB19N20C | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | MOSFET | QFET | MOSFET |
Width | 9.65 mm | 9.65 mm | 9.65 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Forward Transconductance Min | 18.5 S | 10.8 S | 12 S |
Fall Time | 180 ns | 115 ns | 65 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 300 ns | 150 ns | 150 ns |
Factory Pack Quantity | 800 | 800 | 800 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 130 ns | 135 ns | 20 ns |
Typical Turn On Delay Time | 35 ns | 15 ns | 7.5 ns |
Part # Aliases | FQB19N20LTM_NL | FQB19N20CTM_NL | - |
Unit Weight | 0.046296 oz | 0.046296 oz | 0.011640 oz |