PartNumber | FQB22P10TM | FQB22P10TM-F085 |
Description | MOSFET 100V P-Channel QFET | MOSFET P-Chan, -100V, -22A 0.125HM@VGS=-10V |
Manufacturer | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V |
Id Continuous Drain Current | 22 A | 22 A |
Rds On Drain Source Resistance | 125 mOhms | 125 mOhms |
Vgs Gate Source Voltage | 30 V | 30 V |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C |
Pd Power Dissipation | 3.75 W | 3.75 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Packaging | Reel | Reel |
Height | 4.83 mm | 4.83 mm |
Length | 10.67 mm | 10.67 mm |
Series | FQB22P10 | FQB22P10TM_F085 |
Transistor Type | 1 P-Channel | 1 P-Channel |
Type | MOSFET | - |
Width | 9.65 mm | 9.65 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Forward Transconductance Min | 13.5 S | - |
Fall Time | 110 ns | 110 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 170 ns | 170 ns |
Factory Pack Quantity | 800 | 800 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 60 ns | 60 ns |
Typical Turn On Delay Time | 17 ns | 17 ns |
Part # Aliases | FQB22P10TM_NL | FQB22P10TM_F085 |
Unit Weight | 0.046296 oz | 0.045856 oz |
Qualification | - | AEC-Q101 |
Tradename | - | QFET |