FQB3N8

FQB3N80TM vs FQB3N80 vs FQB3N80TM-NL

 
PartNumberFQB3N80TMFQB3N80FQB3N80TM-NL
DescriptionMOSFET 800V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current3 A--
Rds On Drain Source Resistance5 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.13 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min2.85 S--
Fall Time30 ns--
Product TypeMOSFET--
Rise Time40 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30 ns--
Typical Turn On Delay Time15 ns--
Unit Weight0.011640 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB3N80TM MOSFET 800V N-Channel QFET
FQB3N80 New and Original
FQB3N80TM-NL New and Original
FQB3N80TMFSC New and Original
ON Semiconductor
ON Semiconductor
FQB3N80TM MOSFET N-CH 800V 3A D2PAK
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