PartNumber | FQB55N10TM | FQB50N06LTM | FQB50N06TM |
Description | MOSFET 100V N-Channel QFET | MOSFET 60V N-Channel QFET Logic Level | MOSFET 60V N-Channel QFET |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | E |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 60 V | 60 V |
Id Continuous Drain Current | 55 A | 52.4 A | 50 A |
Rds On Drain Source Resistance | 26 mOhms | 21 mOhms | 22 mOhms |
Vgs Gate Source Voltage | 25 V | 20 V | 25 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 3.75 W | 3.75 W | 3.75 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Height | 4.83 mm | 4.83 mm | 4.83 mm |
Length | 10.67 mm | 10.67 mm | 10.67 mm |
Series | FQB55N10 | FQB50N06L | FQB50N06 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | MOSFET | MOSFET | MOSFET |
Width | 9.65 mm | 9.65 mm | 9.65 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Forward Transconductance Min | 38 S | 40 S | 22 S |
Fall Time | 140 ns | 145 ns | 65 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 250 ns | 380 ns | 105 ns |
Factory Pack Quantity | 800 | 800 | 800 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 110 ns | 80 ns | 60 ns |
Typical Turn On Delay Time | 25 ns | 20 ns | 15 ns |
Unit Weight | 0.046296 oz | 0.046296 oz | 0.045856 oz |
Tradename | - | QFET | - |
Part # Aliases | - | - | FQB50N06TM_NL |