FQB7

FQB7N20LTM vs FQB7N30TM vs FQB70N08TM

 
PartNumberFQB7N20LTMFQB7N30TMFQB70N08TM
DescriptionMOSFET 200V N-Ch QFET Logic LevelMOSFET 300V N-Channel QFETMOSFET 80V N-Channel QFET
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYEE
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3TO-263-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage200 V300 V80 V
Id Continuous Drain Current6.5 A7 A70 A
Rds On Drain Source Resistance750 mOhms700 mOhms17 mOhms
Vgs Gate Source Voltage20 V30 V25 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 175 C
Pd Power Dissipation3.13 W3.13 W3.75 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Height4.83 mm4.83 mm4.83 mm
Length10.67 mm10.67 mm10.67 mm
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeMOSFETMOSFETMOSFET
Width9.65 mm9.65 mm9.65 mm
BrandON Semiconductor / FairchildON Semiconductor / FairchildON Semiconductor / Fairchild
Fall Time65 ns35 ns145 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time125 ns75 ns300 ns
Factory Pack Quantity800800800
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time20 ns25 ns90 ns
Typical Turn On Delay Time12 ns13 ns25 ns
Unit Weight0.011640 oz0.011640 oz0.139332 oz
Forward Transconductance Min-4.3 S41 S
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB7N60TM MOSFET 600V N-Channel QFET
FQB7N20LTM MOSFET 200V N-Ch QFET Logic Level
FQB7N60TM-WS MOSFET 600V 7.4A 1Ohm N-Channel
FQB7N65CTM MOSFET 650V 7A NCH MOSFET
FQB7N30TM MOSFET 300V N-Channel QFET
FQB70N08TM MOSFET 80V N-Channel QFET
FQB7042FB New and Original
FQB7045FB New and Original
FQB70N06 New and Original
FQB70N08 New and Original
FQB70N08TM-NL New and Original
FQB70N10 New and Original
FQB70N10TM Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
FQB70N10TM-NL New and Original
FQB7N10 New and Original
FQB7N10L New and Original
FQB7N10LT1 New and Original
FQB7N10TM-NL New and Original
FQB7N10TMFSC New and Original
FQB7N20 New and Original
FQB7N30 New and Original
FQB7N30TM-NL New and Original
FQB7N40 New and Original
FQB7N60 New and Original
FQB7N60M New and Original
FQB7N60TM-NL New and Original
FQB7N60Z New and Original
FQB7N65 New and Original
FQB7N65C New and Original
FQB7N80 New and Original
FQB7N80 7N80 7A 800V New and Original
FQB7N80TM Power Field-Effect Transistor, 6.6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
FQB7N80TM-NL New and Original
FQB7P06 New and Original
FQB7P06TM-NL New and Original
FQB7P06TMFSC New and Original
FQB7P20 New and Original
FQB7N60TM_WS RF Bipolar Transistors MOSFET 600V 7.4A 1Ohm N-Channel
ON Semiconductor
ON Semiconductor
FQB70N08TM MOSFET N-CH 80V 70A D2PAK
FQB70N10TM_AM002 MOSFET N-CH 100V 57A D2PAK
FQB7N10LTM MOSFET N-CH 100V 7.3A D2PAK
FQB7N10TM MOSFET N-CH 100V 7.3A D2PAK
FQB7N30TM MOSFET N-CH 300V 7A D2PAK
FQB7N60TM-WS MOSFET N-CH 600V 7.4A D2PAK
FQB7N65CTM MOSFET N-CH 650V 7A D2PAK
FQB7N80TM_AM002 MOSFET N-CH 800V 6.6A D2PAK
FQB7P06TM MOSFET P-CH 60V 7A D2PAK
FQB7N60TM Darlington Transistors MOSFET 600V N-Channel QFET
FQB7N20LTM MOSFET N-CH 200V 6.5A D2PAK
FQB7N20TM MOSFET N-CH 200V 6.6A D2PAK
Top