 | | |
| PartNumber | FQD2N100TM | FQD2N100TF |
| Description | MOSFET 1000V N-Channel QFET | MOSFET 1000V N-Channel QFET |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | E | E |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1 kV | 1 kV |
| Id Continuous Drain Current | 1.6 A | 1.6 A |
| Rds On Drain Source Resistance | 7.1 Ohms | 7.1 Ohms |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 2.5 W | 2.5 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 2.39 mm | 2.39 mm |
| Length | 6.73 mm | 6.73 mm |
| Series | FQD2N100 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | MOSFET |
| Width | 6.22 mm | 6.22 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 1.9 S | 1.9 S |
| Fall Time | 35 ns | 35 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 30 ns | 30 ns |
| Factory Pack Quantity | 2500 | 2000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25 ns | 25 ns |
| Typical Turn On Delay Time | 13 ns | 13 ns |
| Part # Aliases | FQD2N100TM_NL | - |
| Unit Weight | 0.009184 oz | 0.011640 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQD2N100TM | MOSFET 1000V N-Channel QFET | |
| FQD2N100TF | MOSFET 1000V N-Channel QFET | ||
ON Semiconductor |
FQD2N100TF | MOSFET N-CH 1000V 1.6A DPAK | |
| FQD2N100TM | MOSFET N-CH 1000V 1.6A DPAK | ||
| FQD2N100TM FAIRCHILD | New and Original | ||
| FQD2N100TM-CUT TAPE | New and Original | ||
| FQD2N100TMDKR | New and Original |