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| PartNumber | FQD4N25TM-WS | FQD4N25TM |
| Description | MOSFET 250V N-Channel QFET | MOSFET 250V N-Channel QFET |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | E |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 250 V | 250 V |
| Id Continuous Drain Current | 3 A | 3 A |
| Rds On Drain Source Resistance | 1.75 Ohms | 1.75 Ohms |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 2.5 W | 2.5 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 2.39 mm | 2.39 mm |
| Length | 6.73 mm | 6.73 mm |
| Series | FQD4N25 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Fall Time | 22 ns | 22 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 45 ns | 45 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 6.4 ns | 6.4 ns |
| Typical Turn On Delay Time | 6.8 ns | 6.8 ns |
| Part # Aliases | FQD4N25TM_WS | FQD4N25TM_NL |
| Unit Weight | 0.009184 oz | 0.139332 oz |
| Type | - | MOSFET |
| Forward Transconductance Min | - | 2.4 S |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQD4N25TM-WS | MOSFET 250V N-Channel QFET | |
| FQD4N25TM | MOSFET 250V N-Channel QFET | ||
ON Semiconductor |
FQD4N25TM | MOSFET N-CH 250V 3A DPAK | |
| FQD4N25TM-WS | MOSFET N-CH 250V 3A DPAK | ||
| FQD4N25TM-NL | New and Original | ||
| FQD4N25TM_WS | 250V, NCH MOSFET |