FQI3P2

FQI3P20TU vs FQI3P20 vs FQI3P20TUFSC

 
PartNumberFQI3P20TUFQI3P20FQI3P20TUFSC
DescriptionMOSFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-262-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current2.8 A--
Rds On Drain Source Resistance2.7 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.13 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height7.88 mm--
Length10.29 mm--
Transistor Type1 P-Channel--
Width4.83 mm--
BrandON Semiconductor / Fairchild--
Fall Time25 ns--
Product TypeMOSFET--
Rise Time35 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time12 ns--
Typical Turn On Delay Time8.5 ns--
Unit Weight0.084199 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQI3P20TU MOSFET
FQI3P20 New and Original
FQI3P20TUFSC New and Original
ON Semiconductor
ON Semiconductor
FQI3P20TU MOSFET P-CH 200V 2.8A I2PAK
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