FQI5N2

FQI5N20TU vs FQI5N20 vs FQI5N20L

 
PartNumberFQI5N20TUFQI5N20FQI5N20L
DescriptionMOSFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-262-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current4.5 A--
Rds On Drain Source Resistance1.2 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.13 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height7.88 mm--
Length10.29 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.83 mm--
BrandON Semiconductor / Fairchild--
Fall Time25 ns--
Product TypeMOSFET--
Rise Time55 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time9 ns--
Typical Turn On Delay Time7 ns--
Unit Weight0.084199 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQI5N20TU MOSFET
FQI5N20 New and Original
FQI5N20L New and Original
FQI5N20TUFSC New and Original
ON Semiconductor
ON Semiconductor
FQI5N20LTU MOSFET N-CH 200V 4.5A I2PAK
FQI5N20TU MOSFET N-CH 200V 4.5A I2PAK
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