PartNumber | FQI7N60TU | FQI7N10LTU | FQI7N10TU |
Description | MOSFET 600V N-Channel QFET | MOSFET 100V N-Ch QFET Logic Level | MOSFET N-CH/100V/7.3A/0.35OHM |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-262-3 | TO-262-3 | TO-262-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 100 V | 100 V |
Id Continuous Drain Current | 7.4 A | 7.3 A | 7.3 A |
Rds On Drain Source Resistance | 1 Ohms | 275 mOhms | 280 mOhms |
Vgs Gate Source Voltage | 30 V | 20 V | 25 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 175 C | + 175 C |
Pd Power Dissipation | 3.13 W | 3.75 W | 3.75 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Height | 7.88 mm | 7.88 mm | 7.88 mm |
Length | 10.29 mm | 10.29 mm | 10.29 mm |
Series | FQI7N60 | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | MOSFET | MOSFET | - |
Width | 4.83 mm | 4.83 mm | 4.83 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Forward Transconductance Min | 6.4 S | - | - |
Fall Time | 60 ns | 50 ns | 19 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 80 ns | 100 ns | 24 ns |
Factory Pack Quantity | 1000 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 65 ns | 17 ns | 13 ns |
Typical Turn On Delay Time | 30 ns | 9 ns | 7 ns |
Part # Aliases | FQI7N60TU_NL | - | - |
Unit Weight | 0.073511 oz | 0.084199 oz | 0.084199 oz |