FQI9N5

FQI9N50CTU vs FQI9N50 vs FQI9N50C

 
PartNumberFQI9N50CTUFQI9N50FQI9N50C
DescriptionMOSFET 500V N-Channel Adv Q-FET C-Series
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current9 A--
Rds On Drain Source Resistance800 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation135 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min6.5 S--
Fall Time64 ns--
Product TypeMOSFET--
Rise Time65 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time93 ns--
Typical Turn On Delay Time18 ns--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQI9N50CTU MOSFET 500V N-Channel Adv Q-FET C-Series
FQI9N50TU MOSFET 500V N-Channel QFET
FQI9N50 New and Original
FQI9N50C New and Original
ON Semiconductor
ON Semiconductor
FQI9N50CTU MOSFET N-CH 500V 9A I2PAK
FQI9N50TU MOSFET N-CH 500V 9A I2PAK
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