PartNumber | FQP2N60C | FQP2N80 | FQP2N60 |
Description | MOSFET 600V N-Channel Advance Q-FET | MOSFET 800V N-Channel QFET | MOSFET |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 800 V | 600 V |
Id Continuous Drain Current | 2 A | 2.4 A | 2.4 A |
Rds On Drain Source Resistance | 4.7 Ohms | 6.3 Ohms | 4.7 Ohms |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 54 W | 85 W | 64 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | QFET | QFET | - |
Packaging | Tube | Tube | Tube |
Height | 16.3 mm | 16.3 mm | 16.3 mm |
Length | 10.67 mm | 10.67 mm | 10.67 mm |
Series | FQP2N60C | FQP2N80 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | MOSFET | MOSFET | MOSFET |
Width | 4.7 mm | 4.7 mm | 4.7 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Forward Transconductance Min | 5 S | 2.65 S | - |
Fall Time | 28 ns | 28 ns | 25 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 25 ns | 30 ns | 25 ns |
Factory Pack Quantity | 1000 | 1000 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 24 ns | 25 ns | 20 ns |
Typical Turn On Delay Time | 9 ns | 12 ns | 10 ns |
Part # Aliases | FQP2N60C_NL | FQP2N80_NL | FQP2N60_NL |
Unit Weight | 0.063493 oz | 0.063493 oz | 0.050717 oz |