 |  | | |
| PartNumber | FQP12N60C | FQP12N60C,12N60C, | FQP12N60C,FQP12N60 |
| Description | MOSFET 600V N-Ch Q-FET advance C-Series | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Rds On Drain Source Resistance | 650 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 225 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 16.3 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FQP12N60C | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 13 S | - | - |
| Fall Time | 90 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 85 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 155 ns | - | - |
| Typical Turn On Delay Time | 30 ns | - | - |
| Unit Weight | 0.063493 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQP12N60C | MOSFET 600V N-Ch Q-FET advance C-Series | |
| FQP12N60C,12N60C, | New and Original | ||
| FQP12N60C,FQP12N60 | New and Original | ||
| FQP12N60C,FQPF12N60C,FQP | New and Original | ||
| FQP12N60C/FQPF12N60C | New and Original | ||
| FQP12N60C3 | New and Original | ||
| FQP12N60C_07 | New and Original | ||
| FQP12N60C_F080 | New and Original | ||
ON Semiconductor |
FQP12N60C | IGBT Transistors MOSFET 600V N-Ch Q-FET advance C-Series |