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| PartNumber | FQP12P20 | FQP12P10 |
| Description | MOSFET 200V P-Channel QFET | MOSFET 100V P-Channel QFET |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 100 V |
| Id Continuous Drain Current | 11.5 A | 11.5 A |
| Rds On Drain Source Resistance | 470 mOhms | 290 mOhms |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 175 C |
| Pd Power Dissipation | 120 W | 75 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | QFET | QFET |
| Packaging | Tube | Tube |
| Height | 16.3 mm | 16.3 mm |
| Length | 10.67 mm | 10.67 mm |
| Series | FQP12P20 | FQP12P10 |
| Transistor Type | 1 P-Channel | 1 P-Channel |
| Type | MOSFET | MOSFET |
| Width | 4.7 mm | 4.7 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 6.4 S | 6.7 S |
| Fall Time | 60 ns | 60 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 195 ns | 160 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 40 ns | 35 ns |
| Typical Turn On Delay Time | 20 ns | 15 ns |
| Part # Aliases | FQP12P20_NL | - |
| Unit Weight | 0.063493 oz | 0.063493 oz |
