FQPF4N8

FQPF4N80 vs FQPF4N80,FQPF4N80C, vs FQPF4N80,FQPF4N80C,4N80,

 
PartNumberFQPF4N80FQPF4N80,FQPF4N80C,FQPF4N80,FQPF4N80C,4N80,
DescriptionMOSFET 800V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current2.2 A--
Rds On Drain Source Resistance3.6 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation43 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min2.7 S--
Fall Time35 ns--
Product TypeMOSFET--
Rise Time45 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time35 ns--
Typical Turn On Delay Time16 ns--
Part # AliasesFQPF4N80_NL--
Unit Weight0.090478 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQPF4N80 MOSFET 800V N-Channel QFET
ON Semiconductor
ON Semiconductor
FQPF4N80 MOSFET N-CH 800V 2.2A TO-220F
FQPF4N80,FQPF4N80C, New and Original
FQPF4N80,FQPF4N80C,4N80, New and Original
FQPF4N80,FQPF4N80C,F4N80 New and Original
FQPF4N80/FQPF4N80C New and Original
FQPF4N80C New and Original
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