FQPF4N9

FQPF4N90C vs FQPF4N90CT vs FQPF4N90

 
PartNumberFQPF4N90CFQPF4N90CTFQPF4N90
DescriptionMOSFET 900V N-Ch Q-FET advance C-SeriesMOSFET 900V, 4A, NCH MOSFETMOSFET 900V N-Channel QFET
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYE
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220FP-3TO-220-3TO-220-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage900 V900 V900 V
Id Continuous Drain Current4 A4 A2.5 A
Rds On Drain Source Resistance4.2 Ohms4.2 Ohms3.1 Ohms
Vgs Gate Source Voltage30 V-30 V
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation47 W-47 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
TradenameQFET--
PackagingTubeTubeTube
Height16.07 mm16.3 mm16.3 mm
Length10.36 mm10.67 mm10.67 mm
SeriesFQPF4N90CFQPF4N90C-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeMOSFET-MOSFET
Width4.9 mm4.7 mm4.7 mm
BrandON Semiconductor / FairchildON Semiconductor / FairchildON Semiconductor / Fairchild
Forward Transconductance Min5 S-2.6 S
Fall Time35 ns-40 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time50 ns-70 ns
Factory Pack Quantity1000100050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time40 ns-45 ns
Typical Turn On Delay Time25 ns-25 ns
Part # AliasesFQPF4N90C_NL--
Unit Weight0.080072 oz0.080072 oz0.074950 oz
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQPF4N90C MOSFET 900V N-Ch Q-FET advance C-Series
FQPF4N90CT MOSFET 900V, 4A, NCH MOSFET
FQPF4N90 MOSFET 900V N-Channel QFET
ON Semiconductor
ON Semiconductor
FQPF4N90 MOSFET N-CH 900V 2.5A TO-220F
FQPF4N90C MOSFET N-CH 900V 4A TO-220F
FQPF4N90CT MOSFET N-CH 900V 4A
FQPF4N90C,4N90C New and Original
FQPF4N90C,4N90C, New and Original
FQPF4N90C. 900V, 4A, NCH MOSFET
FQPF4N90C/FQP4N90C New and Original
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