PartNumber | FQPF4N90C | FQPF4N90CT |
Description | MOSFET 900V N-Ch Q-FET advance C-Series | MOSFET 900V, 4A, NCH MOSFET |
Manufacturer | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-220FP-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 900 V | 900 V |
Id Continuous Drain Current | 4 A | 4 A |
Rds On Drain Source Resistance | 4.2 Ohms | 4.2 Ohms |
Vgs Gate Source Voltage | 30 V | - |
Minimum Operating Temperature | - 55 C | - |
Maximum Operating Temperature | + 150 C | - |
Pd Power Dissipation | 47 W | - |
Configuration | Single | Single |
Channel Mode | Enhancement | - |
Tradename | QFET | - |
Packaging | Tube | Tube |
Height | 16.07 mm | 16.3 mm |
Length | 10.36 mm | 10.67 mm |
Series | FQPF4N90C | FQPF4N90C |
Transistor Type | 1 N-Channel | 1 N-Channel |
Type | MOSFET | - |
Width | 4.9 mm | 4.7 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Forward Transconductance Min | 5 S | - |
Fall Time | 35 ns | - |
Product Type | MOSFET | MOSFET |
Rise Time | 50 ns | - |
Factory Pack Quantity | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 40 ns | - |
Typical Turn On Delay Time | 25 ns | - |
Part # Aliases | FQPF4N90C_NL | - |
Unit Weight | 0.080072 oz | 0.080072 oz |