FQPF6N80C

FQPF6N80C vs FQPF6N80CT

 
PartNumberFQPF6N80CFQPF6N80CT
DescriptionMOSFET 800V N-Ch Q-FET advance C-SeriesMOSFET 800V N-Ch Adv Q-FET C-Series
ManufacturerON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFET
RoHSEY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-220FP-3TO-220-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage800 V800 V
Id Continuous Drain Current5.5 A5.5 A
Rds On Drain Source Resistance2.5 Ohms2.5 Ohms
Vgs Gate Source Voltage30 V30 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation51 W51 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameQFET-
PackagingTubeTube
Height16.07 mm16.3 mm
Length10.36 mm10.67 mm
SeriesFQPF6N80CFQPF6N80C
Transistor Type1 N-Channel1 N-Channel
TypeMOSFET-
Width4.9 mm4.7 mm
BrandON Semiconductor / FairchildON Semiconductor / Fairchild
Forward Transconductance Min5.4 S5.4 S
Fall Time44 ns44 ns
Product TypeMOSFETMOSFET
Rise Time65 ns65 ns
Factory Pack Quantity10001000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time47 ns47 ns
Typical Turn On Delay Time26 ns26 ns
Part # AliasesFQPF6N80C_NL-
Unit Weight0.080072 oz0.080072 oz
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQPF6N80C MOSFET 800V N-Ch Q-FET advance C-Series
FQPF6N80CT MOSFET 800V N-Ch Adv Q-FET C-Series
ON Semiconductor
ON Semiconductor
FQPF6N80C MOSFET N-CH 800V 5.5A TO-220F
FQPF6N80CT MOSFET N-CH 800V 5.5A TO-220F
FQPF6N80C 2SK4013 New and Original
FQPF6N80C,6N80C, New and Original
FQPF6N80C,6N80C,F6N80C, New and Original
FQPF6N80C,FQPF6N80,FQPF6 New and Original
FQPF6N80C/2SK2605 New and Original
FQPF6N80C/5N80/7N80/8N80 New and Original
FQPF6N80C/70C/60C New and Original
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