 |  | | |
| PartNumber | GS66502B-E01-MR | GS66506T-E01-MR | GS66504B-E01-MR |
| Description | MOSFET 650V Enhancement Mode Transistor | MOSFET 650V 22A E-Mode GaN | MOSFET 650V 15A E-Mode GaN |
| Manufacturer | GaN Systems | GaN Systems | GaN Systems |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | GaN | GaN | GaN |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | GaNPX-3 | GaNPX-4 | GaNPX-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | 650 V |
| Id Continuous Drain Current | 7.5 A | 22.5 A | 45 A |
| Rds On Drain Source Resistance | 200 mOhms | 67 mOhms | 100 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.3 V | 1.3 V | 1.3 V |
| Vgs Gate Source Voltage | 7 V | 7 V | 7 V |
| Qg Gate Charge | 1.5 nC | 4.4 nC | 6.2 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 0.51 mm | 0.54 mm | 0.51 mm |
| Length | 6.6 mm | 5.5 mm | 6.6 mm |
| Product | MOSFET | MOSFET | MOSFET |
| Series | GS6650x | GS6650x | GS6650x |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5 mm | 4.5 mm | 5 mm |
| Brand | GaN Systems | GaN Systems | GaN Systems |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 250 | 250 | 250 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | GS66502B-E01-MR | GS66506T-E01-MR | GS66504B-E01-MR |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
GaN Systems |
GS66502B-E01-MR | MOSFET 650V Enhancement Mode Transistor | |
| GS66506T-E01-MR | MOSFET 650V 22A E-Mode GaN | ||
| GS66504B-E01-MR | MOSFET 650V 15A E-Mode GaN | ||
| GS66508T-E02-MR | MOSFET 650V 30A E-Mode GaN | ||
| GS66508P-E05-MR | MOSFET 650V 30A E-Mode GaN | ||
| GS66502B-E01-MR | MOSFET 650V Enhancement Mode Transisto | ||
| GS66504-E01-MR | New and Original | ||
| GS66504B-E01 | New and Original | ||
| GS66506T-E01-MR | MOSFET 650V 22A E-Mode GaN | ||
| GS66508B-EVBDB | Power Management IC Development Tools GS66508B Half Bridge Daughter Board | ||
| GS66508P-E05-MR | MOSFET 650V 30A E-Mode GaN | ||
| GS66508T-E02 | New and Original | ||
| GS66508T-E02-MR | MOSFET 650V 30A E-Mode GaN | ||
| GS66508P-E05-TY | MOSFET 650V 30A E-Mode GaN Preproduction Units | ||
| GS66508P-E04-TY | MOSFET 650V 30A E-Mode GaN Preproduction Units | ||
| GS66508T-E01-TY | MOSFET Top cooled 650V GaN Transisto |