GS66508P-E05-MR

GS66508P-E05-MR
Mfr. #:
GS66508P-E05-MR
Manufacturer:
GaN Systems
Description:
MOSFET 650V 30A E-Mode GaN
Lifecycle:
New from this manufacturer.
Datasheet:
GS66508P-E05-MR Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
GS66508P-E05-MR more Information
Product Attribute
Attribute Value
Manufacturer
GaN Systems
Product Category
Transistors - FETs, MOSFETs - Single
Packaging
Reel
Mounting-Style
SMD/SMT
Technology
GaN
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Vgs-Gate-Source-Voltage
10 V
Vds-Drain-Source-Breakdown-Voltage
650 V
Vgs-th-Gate-Source-Threshold-Voltage
1.6 V
Rds-On-Drain-Source-Resistance
55 mOhms
Transistor-Polarity
N-Channel
Qg-Gate-Charge
6.5 nC
Channel-Mode
Enhancement
Tags
GS66508P, GS66508, GS6650, GS665, GS66, GS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
GAN POWER TRANSISTOR
GS6650x 650V GaN Transistors
GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
Part # Mfg. Description Stock Price
GS66508P-E05-MR
DISTI # 499-GS66508P-E05-MR
GaN SystemsMOSFET 650V 30A E-Mode GaN
RoHS: Compliant
0
  • 1:$23.4600
  • 10:$22.7000
  • 25:$21.6500
  • 250:$20.1100
Image Part # Description
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR

MOSFET 650V 30A E-Mode GaN
GS66508P-E05-MR

Mfr.#: GS66508P-E05-MR

OMO.#: OMO-GS66508P-E05-MR

MOSFET 650V 30A E-Mode GaN
GS66508B-EVBDB

Mfr.#: GS66508B-EVBDB

OMO.#: OMO-GS66508B-EVBDB-1190

Power Management IC Development Tools GS66508B Half Bridge Daughter Board
GS66508P-E05-MR

Mfr.#: GS66508P-E05-MR

OMO.#: OMO-GS66508P-E05-MR-1190

MOSFET 650V 30A E-Mode GaN
GS66508T-E02

Mfr.#: GS66508T-E02

OMO.#: OMO-GS66508T-E02-1190

New and Original
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR-1190

MOSFET 650V 30A E-Mode GaN
GS66508P-E05-TY

Mfr.#: GS66508P-E05-TY

OMO.#: OMO-GS66508P-E05-TY-128

MOSFET 650V 30A E-Mode GaN Preproduction Units
GS66508P-E04-TY

Mfr.#: GS66508P-E04-TY

OMO.#: OMO-GS66508P-E04-TY-128

MOSFET 650V 30A E-Mode GaN Preproduction Units
GS66508T-E01-TY

Mfr.#: GS66508T-E01-TY

OMO.#: OMO-GS66508T-E01-TY-128

MOSFET Top cooled 650V GaN Transisto
Availability
Stock:
Available
On Order:
5500
Enter Quantity:
Current price of GS66508P-E05-MR is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$30.16
$30.16
10
$28.66
$286.57
100
$27.15
$2 714.85
500
$25.64
$12 820.15
1000
$24.13
$24 132.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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