PartNumber | GS66508P-E05-MR | GS66508B-EVBDB | GS66508P-E04-TY |
Description | MOSFET 650V 30A E-Mode GaN | Power Management IC Development Tools GS66508B Half Bridge Daughter Board | MOSFET 650V 30A E-Mode GaN Preproduction Units |
Manufacturer | GaN Systems | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | GaN | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | GaNPX-4 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 650 V | - | - |
Id Continuous Drain Current | 30 A | - | - |
Rds On Drain Source Resistance | 55 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.7 V | - | - |
Vgs Gate Source Voltage | 7 V | - | - |
Qg Gate Charge | 5.8 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Height | 0.51 mm | - | - |
Length | 10 mm | - | - |
Product | MOSFET | - | - |
Series | GS6650x | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 8.7 mm | - | - |
Brand | GaN Systems | - | - |
Moisture Sensitive | Yes | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 250 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | GS66508P-E05-MR | - | - |