GS66508

GS66508P-E05-MR vs GS66508B-EVBDB vs GS66508P-E04-TY

 
PartNumberGS66508P-E05-MRGS66508B-EVBDBGS66508P-E04-TY
DescriptionMOSFET 650V 30A E-Mode GaNPower Management IC Development Tools GS66508B Half Bridge Daughter BoardMOSFET 650V 30A E-Mode GaN Preproduction Units
ManufacturerGaN Systems--
Product CategoryMOSFET--
RoHSY--
TechnologyGaN--
Mounting StyleSMD/SMT--
Package / CaseGaNPX-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance55 mOhms--
Vgs th Gate Source Threshold Voltage1.7 V--
Vgs Gate Source Voltage7 V--
Qg Gate Charge5.8 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.51 mm--
Length10 mm--
ProductMOSFET--
SeriesGS6650x--
Transistor Type1 N-Channel--
Width8.7 mm--
BrandGaN Systems--
Moisture SensitiveYes--
Product TypeMOSFET--
Factory Pack Quantity250--
SubcategoryMOSFETs--
Part # AliasesGS66508P-E05-MR--
Manufacturer Part # Description RFQ
GaN Systems
GaN Systems
GS66508T-E02-MR MOSFET 650V 30A E-Mode GaN
GS66508P-E05-MR MOSFET 650V 30A E-Mode GaN
GS66508B-EVBDB Power Management IC Development Tools GS66508B Half Bridge Daughter Board
GS66508P-E05-MR MOSFET 650V 30A E-Mode GaN
GS66508T-E02 New and Original
GS66508T-E02-MR MOSFET 650V 30A E-Mode GaN
GS66508P-E05-TY MOSFET 650V 30A E-Mode GaN Preproduction Units
GS66508P-E04-TY MOSFET 650V 30A E-Mode GaN Preproduction Units
GS66508T-E01-TY MOSFET Top cooled 650V GaN Transisto
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