GS66504

GS66504B-E01-MR vs GS66504-E01-MR vs GS66504B-E01

 
PartNumberGS66504B-E01-MRGS66504-E01-MRGS66504B-E01
DescriptionMOSFET 650V 15A E-Mode GaN
ManufacturerGaN Systems-GaN Systems
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologyGaN-GaN
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseGaNPX-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current45 A--
Rds On Drain Source Resistance100 mOhms--
Vgs th Gate Source Threshold Voltage1.3 V--
Vgs Gate Source Voltage7 V--
Qg Gate Charge6.2 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
ConfigurationSingle-Single
Channel ModeEnhancement--
PackagingReel-Reel
Height0.51 mm--
Length6.6 mm--
ProductMOSFET--
SeriesGS6650x--
Transistor Type1 N-Channel--
Width5 mm--
BrandGaN Systems--
Moisture SensitiveYes--
Product TypeMOSFET--
Factory Pack Quantity250--
SubcategoryMOSFETs--
Part # AliasesGS66504B-E01-MR--
Vgs Gate Source Voltage--10 V
Vds Drain Source Breakdown Voltage--650 V
Vgs th Gate Source Threshold Voltage--1.6 V
Rds On Drain Source Resistance--110 mOhms
Qg Gate Charge--3.3 nC
Manufacturer Part # Description RFQ
GaN Systems
GaN Systems
GS66504B-E01-MR MOSFET 650V 15A E-Mode GaN
GS66504-E01-MR New and Original
GS66504B-E01 New and Original
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