PartNumber | HN4A51JTE85LF | HN4A51JTE85LFCT-ND | HN4A51J |
Description | Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A | ||
Manufacturer | Toshiba | - | TOSHIBA |
Product Category | Bipolar Transistors - BJT | - | Transistors (BJT) - Arrays |
RoHS | Y | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-25-5 | - | - |
Transistor Polarity | PNP | - | - |
Configuration | Dual | - | - |
Collector Emitter Voltage VCEO Max | - 120 V | - | - |
Collector Base Voltage VCBO | - 120 V | - | - |
Emitter Base Voltage VEBO | - 5 V | - | - |
Collector Emitter Saturation Voltage | - 0.3 V | - | - |
Maximum DC Collector Current | - 100 mA | - | - |
Gain Bandwidth Product fT | 100 MHz | - | - |
Series | HN4A51 | - | - |
DC Current Gain hFE Max | 700 | - | - |
Packaging | Reel | - | - |
Brand | Toshiba | - | - |
Continuous Collector Current | - 100 mA | - | - |
DC Collector/Base Gain hfe Min | 200 | - | - |
Pd Power Dissipation | 300 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.000494 oz | - | - |