 | | | |
| PartNumber | HN4B01JE(TE85L,F) | HN4B01JE | HN4B01JE(TE85LF) |
| Description | Bipolar Transistors - BJT Vceo=-50V Vceo=50V | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Transistor Polarity | NPN, PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Maximum DC Collector Current | 0.15 A | - | - |
| Gain Bandwidth Product fT | 80 MHz | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | HN4B01 | - | - |
| Packaging | Reel | - | - |
| Brand | Toshiba | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 100 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
HN4B01JE(TE85L,F) | Bipolar Transistors - BJT Vceo=-50V Vceo=50V | |
| HN4B04J(TE85L,F) | Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A | ||
| HN4B01JE(TE85L,F) | Bipolar Transistors - BJT Vceo=-50V Vceo=50V | ||
| HN4B01JE(TE85LF)CT-ND | New and Original | ||
| HN4B01JE(TE85LF)DKR-ND | New and Original | ||
| HN4B01JE(TE85LF)TR-ND | New and Original | ||
| HN4B04J(TE85LF)CT-ND | New and Original | ||
| HN4B04J(TE85LF)DKR-ND | New and Original | ||
| HN4B04J(TE85LF)TR-ND | New and Original | ||
| HN4B01JE | New and Original | ||
| HN4B01JE(TE85LF) | New and Original | ||
| HN4B04J | New and Original | ||
| HN4B04J(TE85LF) | New and Original | ||
| HN4B06J | New and Original |