PartNumber | IFF450B12ME4PB11BPSA1 | IFF450B12ME4S8PB11BPSA1 |
Description | IGBT Modules | IGBT Modules Description: |
Manufacturer | Infineon | Infineon |
Product Category | IGBT Modules | IGBT Modules |
RoHS | Y | Y |
Product | IGBT Silicon Modules | IGBT Silicon Modules |
Configuration | Dual | - |
Collector Emitter Voltage VCEO Max | 1200 V | 1200 V |
Collector Emitter Saturation Voltage | 1.75 V | 1.75 V |
Continuous Collector Current at 25 C | 450 A | 450 A |
Gate Emitter Leakage Current | 400 nA | 400 nA |
Pd Power Dissipation | 20 mW | - |
Package / Case | 152 mm x 62.5 mm x 20.5 mm | - |
Minimum Operating Temperature | - 40 C | - 40 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Packaging | Tray | Tray |
Brand | Infineon Technologies | Infineon Technologies |
Mounting Style | Press Fit | Screw Mount |
Maximum Gate Emitter Voltage | 15 V | 20 V |
Product Type | IGBT Modules | IGBT Modules |
Factory Pack Quantity | 6 | 6 |
Subcategory | IGBTs | IGBTs |
Part # Aliases | SP001377612 | IFF450B12ME4S8P_B11 |