PartNumber | IGLD60R190D1AUMA1 | IGLD60R070D1AUMA1 | IGL520-R |
Description | Bipolar Transistors - BJT | MOSFET 600V CoolGaN Power Transistor | |
Manufacturer | Infineon | Infineon | - |
Product Category | Bipolar Transistors - BJT | MOSFET | - |
RoHS | Y | Y | - |
Packaging | Reel | Reel | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Product Type | BJTs - Bipolar Transistors | MOSFET | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | Transistors | MOSFETs | - |
Part # Aliases | IGLD60R190D1 SP001705426 | SP001705420 | - |
Technology | - | GaN | - |
Mounting Style | - | SMD/SMT | - |
Package / Case | - | PG-LSON-8 | - |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 600 V | - |
Id Continuous Drain Current | - | 15 A | - |
Rds On Drain Source Resistance | - | 70 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 0.9 V | - |
Vgs Gate Source Voltage | - | 10 V | - |
Qg Gate Charge | - | 5.8 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 114 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Tradename | - | CoolGaN | - |
Transistor Type | - | 1 N-Channel | - |
Fall Time | - | 13 ns | - |
Rise Time | - | 9 ns | - |
Typical Turn Off Delay Time | - | 15 ns | - |
Typical Turn On Delay Time | - | 15 ns | - |