 |  | | |
| PartNumber | IMZ120R045M1XKSA1 | IMZ120R030M1HXKSA1 | IMZ120R060M1HXKSA1 |
| Description | MOSFET SIC DISCRETE | MOSFET | MOSFET |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | SiC | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-7 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 1200 V | - | - |
| Id Continuous Drain Current | 52 A | - | - |
| Rds On Drain Source Resistance | 59 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | - | - |
| Vgs Gate Source Voltage | - 10 V, 20 V | - | - |
| Qg Gate Charge | 52 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 228 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | Tube |
| Series | IMZ120R045 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 11.1 S | - | - |
| Fall Time | 13 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 18 ns | - | - |
| Factory Pack Quantity | 240 | 240 | 240 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 17 ns | - | - |
| Typical Turn On Delay Time | 9 ns | - | - |
| Part # Aliases | IMZ120R045M1 SP001346258 | IMZ120R030M1H SP001727394 | IMZ120R060M1H SP001808370 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IMZ120R045M1XKSA1 | MOSFET SIC DISCRETE | |
| IMZ120R030M1HXKSA1 | MOSFET | ||
| IMZ120R090M1HXKSA1 | MOSFET | ||
| IMZ120R060M1HXKSA1 | MOSFET | ||
| IMZ120R080M1 | New and Original | ||
| IMZ120R045M1 | MOS Power Transistors HV (>= 200V) (Alt: IMZ120R045M1) |