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IMZ120R045M1XKSA1

IMZ120R045M1XKSA1
Mfr. #:
IMZ120R045M1XKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET SIC DISCRETE
Lifecycle:
New from this manufacturer.
Datasheet:
IMZ120R045M1XKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IMZ120R045M1XKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
SiC
Mounting Style:
Through Hole
Package / Case:
TO-247-7
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
1200 V
Id - Continuous Drain Current:
52 A
Rds On - Drain-Source Resistance:
59 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.5 V
Vgs - Gate-Source Voltage:
- 10 V, 20 V
Qg - Gate Charge:
52 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
228 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Series:
IMZ120R045
Transistor Type:
1 N-Channel
Brand:
Infineon Technologies
Forward Transconductance - Min:
11.1 S
Fall Time:
13 ns
Product Type:
MOSFET
Rise Time:
18 ns
Factory Pack Quantity:
240
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
17 ns
Typical Turn-On Delay Time:
9 ns
Part # Aliases:
IMZ120R045M1 SP001346258
Tags
IMZ120R0, IMZ12, IMZ1, IMZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
1200V CoolSiC™ Modules
Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.
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Availability
Stock:
Available
On Order:
5000
Enter Quantity:
Current price of IMZ120R045M1XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$25.03
$25.03
5
$24.77
$123.85
10
$23.09
$230.90
25
$22.05
$551.25
100
$19.71
$1 971.00
250
$18.80
$4 700.00
500
$17.90
$8 950.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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