 | | | |
| PartNumber | IPA057N08N3 G | IPA057N06N3 G | IPA057N06N3GXKSA1 |
| Description | MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3 | MOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3 | MOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220FP-3 | TO-220FP-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 60 V | 60 V |
| Id Continuous Drain Current | 60 A | 60 A | 60 A |
| Rds On Drain Source Resistance | 5.7 mOhms | 4.6 mOhms | 4.6 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 18 nC | 82 nC | 82 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 39 W | 38 W | 38 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Tube | Tube | Tube |
| Height | 16.15 mm | 16.15 mm | 16.15 mm |
| Length | 10.65 mm | 10.65 mm | 10.65 mm |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.85 mm | 4.85 mm | 4.85 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 9 ns | 9 ns | 9 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 42 ns | 68 ns | 68 ns |
| Factory Pack Quantity | 500 | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 36 ns | 32 ns | 32 ns |
| Typical Turn On Delay Time | 17 ns | 24 ns | 24 ns |
| Part # Aliases | IPA057N08N3GXKSA1 IPA57N8N3GXK SP000454442 | IPA057N06N3GXKSA1 IPA57N6N3GXK SP000457582 | G IPA057N06N3 IPA57N6N3GXK SP000457582 |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
| Vgs th Gate Source Threshold Voltage | - | 2 V | 2 V |
| Forward Transconductance Min | - | 41 S | 41 S |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPA057N08N3 G | MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3 | |
| IPA057N06N3 G | MOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3 | ||
| IPA057N06N3GXKSA1 | MOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3 | ||
| IPA057N06N3GXKSA1 | MOSFET N-CH 60V 60A TO220-3-31 | ||
| IPA057N08N3GXKSA1 | MOSFET N-CH 80V 60A TO220-3 | ||
| IPA057N08N3GXK | Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA057N08N3GXKSA1) | ||
| IPA057N06N | New and Original | ||
| IPA057N06N3-G | New and Original | ||
| IPA057N06N3G | Power Field-Effect Transistor, 60A I(D), 60V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IPA057N08N | New and Original | ||
| IPA057N08N3 | New and Original | ||
| IPA057N08N3G | Power Field-Effect Transistor, 60A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IPA057N08N3G,057N08N | New and Original | ||
| IPA057N08N3GXKSA1 , 2SD1 | New and Original | ||
| IPA057N08N3 G | Darlington Transistors MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3 | ||
| IPA057N06N3 G | IGBT Transistors MOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3 |