PartNumber | IPA057N06N3GXKSA1 | IPA057N06N3G |
Description | MOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3 | Power Field-Effect Transistor, 60A I(D), 60V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
Manufacturer | Infineon | INF |
Product Category | MOSFET | FETs - Single |
RoHS | Y | - |
Technology | Si | - |
Mounting Style | Through Hole | - |
Package / Case | TO-220FP-3 | - |
Number of Channels | 1 Channel | - |
Transistor Polarity | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | - |
Id Continuous Drain Current | 60 A | - |
Rds On Drain Source Resistance | 4.6 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | - |
Vgs Gate Source Voltage | 20 V | - |
Qg Gate Charge | 82 nC | - |
Minimum Operating Temperature | - 55 C | - |
Maximum Operating Temperature | + 175 C | - |
Pd Power Dissipation | 38 W | - |
Configuration | Single | - |
Channel Mode | Enhancement | - |
Tradename | OptiMOS | - |
Packaging | Tube | - |
Height | 16.15 mm | - |
Length | 10.65 mm | - |
Series | OptiMOS 3 | - |
Transistor Type | 1 N-Channel | - |
Width | 4.85 mm | - |
Brand | Infineon Technologies | - |
Forward Transconductance Min | 41 S | - |
Fall Time | 9 ns | - |
Product Type | MOSFET | - |
Rise Time | 68 ns | - |
Factory Pack Quantity | 500 | - |
Subcategory | MOSFETs | - |
Typical Turn Off Delay Time | 32 ns | - |
Typical Turn On Delay Time | 24 ns | - |
Part # Aliases | G IPA057N06N3 IPA57N6N3GXK SP000457582 | - |
Unit Weight | 0.211644 oz | - |