IPB042N0

IPB042N03L G vs IPB042N03LGATMA1 vs IPB042N03LG

 
PartNumberIPB042N03L GIPB042N03LGATMA1IPB042N03LG
DescriptionMOSFET N-Ch 30V 70A D2PAK-2 OptiMOS 3MOSFET LV POWER MOS
ManufacturerInfineonInfineonINFINEON
Product CategoryMOSFETMOSFETIC Chips
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current70 A--
Rds On Drain Source Resistance4.2 mOhms--
Vgs th Gate Source Threshold Voltage2.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge18 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation79 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesOptiMOS 3--
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min87 S--
Fall Time4.4 ns--
Product TypeMOSFETMOSFET-
Rise Time5.6 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time28 ns--
Typical Turn On Delay Time7.4 ns--
Part # AliasesIPB042N03LGATMA1 IPB42N3LGXT SP000304124G IPB042N03L IPB42N3LGXT SP000304124-
Unit Weight0.139332 oz0.139332 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPB042N03L G MOSFET N-Ch 30V 70A D2PAK-2 OptiMOS 3
IPB042N03LGATMA1 MOSFET N-CH 30V 70A TO-263-3
Infineon Technologies
Infineon Technologies
IPB042N03LGATMA1 MOSFET LV POWER MOS
IPB042N03LG New and Original
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