 |  | | |
| PartNumber | IPB04N03LA G | IPB04N03LA | IPB04N03LAT |
| Description | MOSFET N-Ch 25V 80A D2PAK-2 | MOSFET N-CH 25V 80A D2PAK | MOSFET N-CH 25V 80A D2PAK |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Id Continuous Drain Current | 80 A | - | - |
| Rds On Drain Source Resistance | 6.4 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 107 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 85 S / 43 S | - | - |
| Fall Time | 5.4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4.5 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 38 ns | - | - |
| Typical Turn On Delay Time | 13 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB04N03LA G | MOSFET N-Ch 25V 80A D2PAK-2 | |
Infineon Technologies |
IPB04N03LB | MOSFET N-CH 30V 80A D2PAK | |
| IPB04N03LB G | MOSFET N-CH 30V 80A D2PAK | ||
| IPB04N03LA | MOSFET N-CH 25V 80A D2PAK | ||
| IPB04N03LA G | MOSFET N-CH 25V 80A TO-263 | ||
| IPB04N03LAT | MOSFET N-CH 25V 80A D2PAK | ||
| IPB04N03L | New and Original | ||
| IPB04N03LAG | Trans MOSFET N-CH 25V 80A 3-Pin TO-263 - Bulk (Alt: IPB04N03LAG) |