IPB057

IPB057N06N vs IPB057N06NATMA1 vs IPB057N06N3 G

 
PartNumberIPB057N06NIPB057N06NATMA1IPB057N06N3 G
DescriptionMOSFET N-Ch 60V 45A D2PAK-2MOSFET N-Ch 60V 45A D2PAK-2
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePG-TO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current45 A45 A-
Rds On Drain Source Resistance5.7 mOhms4.9 mOhms-
Vgs th Gate Source Threshold Voltage2.1 V2.1 V-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge27 nC32 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation83 W83 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesOptiMOS 5OptiMOS 5-
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min36 S36 S-
Fall Time7 ns7 ns-
Product TypeMOSFETMOSFET-
Rise Time12 ns12 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time20 ns20 ns-
Typical Turn On Delay Time12 ns12 ns-
Part # AliasesIPB057N06NATMA1 IPB57N6NXT SP000962140IPB057N06N IPB57N6NXT SP000962140-
Unit Weight0.068654 oz0.139332 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPB057N06N MOSFET N-Ch 60V 45A D2PAK-2
IPB057N06NATMA1 MOSFET N-Ch 60V 45A D2PAK-2
IPB057N06NATMA1 Darlington Transistors MOSFET N-Ch 60V 45A D2PAK-2
IPB057N06N Trans MOSFET N-CH 60V 45A
IPB057N06N3 G New and Original
IPB057N07N New and Original
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