IPB180N04S3

IPB180N04S3-02 vs IPB180N04S302ATMA1 vs IPB180N04S302XT

 
PartNumberIPB180N04S3-02IPB180N04S302ATMA1IPB180N04S302XT
DescriptionMOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-TMOSFET N-CHANNEL_30/40VTrans MOSFET N-CH 40V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB180N04S302ATMA1)
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-7TO-263-7-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current180 A--
Rds On Drain Source Resistance1.6 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation300 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameOptiMOS--
PackagingReelReel-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesOptiMOS-T--
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time18 ns--
Product TypeMOSFETMOSFET-
Rise Time19 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time57 ns--
Typical Turn On Delay Time35 ns--
Part # AliasesIPB180N04S302ATMA1 IPB18N4S32XT SP000254821IPB180N04S3-02 IPB18N4S32XT SP000254821-
Unit Weight0.056438 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPB180N04S3-02 MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T
IPB180N04S302ATMA1 MOSFET N-CH 40V 180A TO263-7
Infineon Technologies
Infineon Technologies
IPB180N04S302ATMA1 MOSFET N-CHANNEL_30/40V
IPB180N04S302XT Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB180N04S302ATMA1)
IPB180N04S3-02 MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T
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