PartNumber | IPB180N03S4L-H0 | IPB180N03S4L-01 | IPB180N03S4L01ATMA1 |
Description | MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2 | MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2 | MOSFET N-CH 30V 180A TO263-7-3 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-7 | TO-263-7 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 180 A | 180 A | - |
Rds On Drain Source Resistance | 1.1 mOhms | 1.05 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 20 V | 16 V | - |
Qg Gate Charge | 176 nC | 187 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 188 W | 188 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 4.4 mm | 4.4 mm | - |
Length | 10 mm | 10 mm | - |
Series | OptiMOS-T2 | OptiMOS-T2 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 9.25 mm | 9.25 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 41 ns | 23 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 24 ns | 5 ns | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 38 ns | 57 ns | - |
Typical Turn On Delay Time | 35 ns | 8 ns | - |
Part # Aliases | IPB180N03S4LH0ATMA1 IPB18N3S4LHXT SP000555050 | IPB180N03S4L01ATMA1 IPB18N3S4L1XT SP000555002 | - |
Unit Weight | 0.056438 oz | 0.056438 oz | - |