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IPB180N06S4H1ATMA2

IPB180N06S4H1ATMA2
Mfr. #:
IPB180N06S4H1ATMA2
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 180A D2PAK-6
Lifecycle:
New from this manufacturer.
Datasheet:
IPB180N06S4H1ATMA2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB180N06S4H1ATMA2 DatasheetIPB180N06S4H1ATMA2 Datasheet (P4-P6)IPB180N06S4H1ATMA2 Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-7
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
180 A
Rds On - Drain-Source Resistance:
1.7 mOhms
Configuration:
Single
Qualification:
AEC-Q101
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Series:
IPB180N06
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Product Type:
MOSFET
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Part # Aliases:
IPB180N06S4-H1 IPB18N6S4H1XT SP001028786
Unit Weight:
0.056438 oz
Tags
IPB180N06, IPB180N0, IPB180N, IPB18, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 10, N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK Infineon IPB180N06S4H1ATMA2
***ical
Trans MOSFET N-CH 60V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
***p One Stop Global
Trans MOSFET N-CH 60V 180A Automotive 7-Pin(6+Tab) TO-263
***et Europe
Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) TO-263
***ronik
MOSFET 60V 1.7mOHM AECQ TO252
***i-Key
MOSFET N-CH 60V 180A TO263-7
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0013Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:250W; No. Of Pins:7Pins
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 60V, 180A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 60V, 180A, TO-263-7; Polarità Transistor:Canale N; Corrente Continua di Drain Id:180A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0013ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:250W; Modello Case Transistor:TO-263; No. di Pin:7Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested; Ultra low RDSon; Ultra high ID | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
Part # Mfg. Description Stock Price
IPB180N06S4H1ATMA2
DISTI # V72:2272_06378683		Infineon Technologies AGTrans MOSFET N-CH 60V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		375
  • 250:$2.4169
  • 100:$2.5600
  • 25:$2.9430
  • 10:$2.9740
  • 1:$3.4660
IPB180N06S4H1ATMA2
DISTI # IPB180N06S4H1ATMA2-ND		Infineon Technologies AGMOSFET N-CH 60V 180A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$2.1867
IPB180N06S4H1ATMA2
DISTI # 27460496		Infineon Technologies AGTrans MOSFET N-CH 60V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		375
  • 250:$2.4169
  • 100:$2.5600
  • 25:$2.9430
  • 10:$2.9740
  • 4:$3.4660
IPB180N06S4H1ATMA2
DISTI # IPB180N06S4H1ATMA2		Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB180N06S4H1ATMA2)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.9900
  • 2000:$1.8900
  • 4000:$1.8900
  • 6000:$1.7900
  • 10000:$1.7900
IPB180N06S4H1ATMA2
DISTI # 49AC0283		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 60V, 180A, TO263,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0013ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes1134
  • 500:$2.3600
  • 250:$2.6300
  • 100:$2.7700
  • 50:$2.9100
  • 25:$3.0600
  • 10:$3.2000
  • 1:$3.7600
IPB180N06S4H1ATMA2.
DISTI # 32AC0677		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0013ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:250W,No. of Pins:7Pins0
  • 4000:$1.5900
  • 2000:$1.6900
  • 1:$1.7900
IPB180N06S4H1ATMA2
DISTI # 726-IPB180N06S4H1ATM		Infineon Technologies AGMOSFET N-Ch 60V 180A D2PAK-6
RoHS: Compliant		13325
  • 1:$3.7600
  • 10:$3.2000
  • 100:$2.7700
  • 250:$2.6300
  • 500:$2.3600
  • 1000:$1.9900
IPB180N06S4-H1
DISTI # 726-IPB180N06S4-H1		Infineon Technologies AGMOSFET N-Ch 60V 180A D2PAK-6 OptiMOS-T2
RoHS: Compliant		0
    IPB180N06S4H1ATMA2
    DISTI # 8275182P    		Infineon Technologies AGMOSFET N-CH 180A 60V OPTIMOS-T2 TO263-7, RL270
    • 100:£1.6950
    • 200:£1.6110
    IPB180N06S4H1ATMA2
    DISTI # 2839451    		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 60V, 180A, TO263
    RoHS: Compliant    		1134
    • 1000:$3.0900
    • 500:$3.2500
    • 250:$3.4300
    • 100:$3.6200
    • 10:$4.1000
    • 1:$4.3800
    IPB180N06S4H1ATMA2
    DISTI # 2839451    		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 60V, 180A, TO263
    RoHS: Compliant    		1381
    • 500:£1.4800
    • 250:£1.5600
    • 100:£1.6400
    • 10:£2.1400
    • 1:£3.2800
    IPB180N06S4H1ATMA2
    DISTI # C1S322000626524    		Infineon Technologies AGTrans MOSFET N-CH 60V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
    RoHS: Compliant    		1134
    • 1000:$2.1900
    • 500:$2.2400
    • 250:$2.4700
    • 100:$2.6400
    • 10:$3.3700
    • 1:$5.0100
    IPB180N06S4H1ATMA2
    DISTI # C1S322000331501    		Infineon Technologies AGTrans MOSFET N-CH 60V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
    RoHS: Compliant    		375
    • 250:$2.4169
    • 100:$2.5600
    • 25:$2.9430
    • 10:$2.9740
    • 1:$3.4660
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    Availability
    Stock:
    Available
    On Order:
    1992
    Enter Quantity:
    Current price of IPB180N06S4H1ATMA2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $3.75
    $3.75
    10
    $3.19
    $31.90
    100
    $2.76
    $276.00
    250
    $2.62
    $655.00
    500
    $2.35
    $1 175.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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