PartNumber | IPB180N06S4H1ATMA2 | IPB180N06S4H1ATMA1 |
Description | MOSFET N-Ch 60V 180A D2PAK-6 | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS-T2 |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | TO-263-7 | TO-263-7 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V |
Id Continuous Drain Current | 180 A | 180 A |
Rds On Drain Source Resistance | 1.7 mOhms | 1.3 mOhms |
Configuration | Single | Single |
Qualification | AEC-Q101 | - |
Packaging | Reel | Reel |
Height | 4.4 mm | 4.4 mm |
Length | 10 mm | 10 mm |
Series | IPB180N06 | XPB180N06 |
Transistor Type | 1 N-Channel | 1 N-Channel |
Width | 9.25 mm | 9.25 mm |
Brand | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET |
Factory Pack Quantity | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs |
Part # Aliases | IPB180N06S4-H1 IPB18N6S4H1XT SP001028786 | IPB180N06S4-H1 IPB180N06S4H1XT SP000415562 |
Unit Weight | 0.056438 oz | - |
Vgs th Gate Source Threshold Voltage | - | 2 V |
Vgs Gate Source Voltage | - | 20 V |
Qg Gate Charge | - | 270 nC |
Minimum Operating Temperature | - | - 55 C |
Maximum Operating Temperature | - | + 175 C |
Pd Power Dissipation | - | 250 W |
Channel Mode | - | Enhancement |
Fall Time | - | 15 ns |
Rise Time | - | 5 ns |
Typical Turn Off Delay Time | - | 60 ns |
Typical Turn On Delay Time | - | 30 ns |