IPB180N06

IPB180N06S4H1ATMA2 vs IPB180N06S4H1ATMA1

 
PartNumberIPB180N06S4H1ATMA2IPB180N06S4H1ATMA1
DescriptionMOSFET N-Ch 60V 180A D2PAK-6MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS-T2
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-263-7TO-263-7
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V
Id Continuous Drain Current180 A180 A
Rds On Drain Source Resistance1.7 mOhms1.3 mOhms
ConfigurationSingleSingle
QualificationAEC-Q101-
PackagingReelReel
Height4.4 mm4.4 mm
Length10 mm10 mm
SeriesIPB180N06XPB180N06
Transistor Type1 N-Channel1 N-Channel
Width9.25 mm9.25 mm
BrandInfineon TechnologiesInfineon Technologies
Product TypeMOSFETMOSFET
Factory Pack Quantity10001000
SubcategoryMOSFETsMOSFETs
Part # AliasesIPB180N06S4-H1 IPB18N6S4H1XT SP001028786IPB180N06S4-H1 IPB180N06S4H1XT SP000415562
Unit Weight0.056438 oz-
Vgs th Gate Source Threshold Voltage-2 V
Vgs Gate Source Voltage-20 V
Qg Gate Charge-270 nC
Minimum Operating Temperature-- 55 C
Maximum Operating Temperature-+ 175 C
Pd Power Dissipation-250 W
Channel Mode-Enhancement
Fall Time-15 ns
Rise Time-5 ns
Typical Turn Off Delay Time-60 ns
Typical Turn On Delay Time-30 ns
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPB180N06S4H1ATMA2 MOSFET N-Ch 60V 180A D2PAK-6
IPB180N06S4H1ATMA1 MOSFET N-CH 60V 180A TO263-7
IPB180N06S4H1ATMA2 MOSFET N-CH 60V 180A TO263-7
Infineon Technologies
Infineon Technologies
IPB180N06S4H1ATMA1 MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS-T2
IPB180N06S4-H1 MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS-T2
IPB180N06S4-H1(4N06H1) New and Original
IPB180N06S4-HI New and Original
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