PartNumber | IPB180N04S4-01 | IPB180N04S4-00 | IPB180N04S4-H0 |
Description | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-7 | TO-263-7 | TO-263-7 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
Id Continuous Drain Current | 180 A | 180 A | 180 A |
Rds On Drain Source Resistance | 1.3 mOhms | 800 uOhms | 900 uOhms |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 135 nC | 286 nC | 225 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 188 W | 300 W | 250 W |
Configuration | Single | Single | Single |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 4.4 mm | 4.4 mm | 4.4 mm |
Length | 10 mm | 10 mm | 10 mm |
Series | OptiMOS-T2 | OptiMOS-T2 | OptiMOS-T2 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 9.25 mm | 9.25 mm | 9.25 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 41 ns | 58 ns | 49 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 24 ns | 24 ns | 24 ns |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 38 ns | 67 ns | 50 ns |
Typical Turn On Delay Time | 35 ns | 53 ns | 44 ns |
Part # Aliases | IPB180N04S401ATMA1 IPB18N4S41XT SP000705694 | IPB180N04S400ATMA1 IPB18N4S4XT SP000646176 | IPB180N04S4H0ATMA1 IPB18N4S4HXT SP000711248 |
Unit Weight | 0.056438 oz | 0.056438 oz | 0.056438 oz |
Vgs th Gate Source Threshold Voltage | - | 2 V | 2 V |
Channel Mode | - | Enhancement | Enhancement |