 |  | |
| PartNumber | IPB60R180P7ATMA1 | IPB60R180C7ATMA1 |
| Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 18 A | - |
| Rds On Drain Source Resistance | 145 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 25 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 72 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Reel | Reel |
| Transistor Type | 1 N-Channel | - |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 8 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 12 ns | - |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 85 ns | - |
| Typical Turn On Delay Time | 14 ns | - |
| Part # Aliases | IPB60R180P7 SP001664934 | IPB60R180C7 SP001296224 |
| Tradename | - | CoolMOS |
| Height | - | 4.4 mm |
| Length | - | 10 mm |
| Series | - | CoolMOS C7 |
| Width | - | 9.25 mm |
| Unit Weight | - | 0.139332 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB60R180P7ATMA1 | MOSFET HIGH POWER_NEW | |
| IPB60R180C7ATMA1 | MOSFET N-CH 650V 13A TO263-3 | ||
| IPB60R180P7ATMA1 | MOSFET TO263-3 | ||
Infineon Technologies |
IPB60R180C7ATMA1 | MOSFET HIGH POWER_NEW | |
| IPB60R180P7ATMA1-CUT TAPE | New and Original |