IPB60R180P7ATMA1

Mfr. #:: IPB60R180P7ATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET HIGH POWER_NEW
Lifecycle:: New from this manufacturer.
Datasheet:: IPB60R180P7ATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: IPB60R180P7ATMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 18 A

Rds On - Drain-Source Resistance:: 145 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 25 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 72 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Transistor Type:: 1 N-Channel

Brand:: Infineon Technologies

Fall Time:: 8 ns

Product Type:: MOSFET

Rise Time:: 12 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 85 ns

Typical Turn-On Delay Time:: 14 ns

Part # Aliases:: IPB60R180P7 SP001664934

Tags: IPB60R18, IPB60R1, IPB60R, IPB60, IPB6, IPB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IPB60R180P7ATMA1 Description

***ure Electronics: Single N-Channel 600 V 180 mOhm CoolMOS Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 600V 18A

***ronik: CoolMOS 600V 18A 180mOhm TO263

***i-Key: MOSFET TO263-3

***et Europe: HIGH POWER_NEW

***ark: Mosfet, N-Ch, 600V, 18A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.145Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ineon: Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 600V, 18A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.145ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:72W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, N-CH, 600V, 18A, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:18A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.145ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:72W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

IPB60R180P7ATMA1 More Information

600V CoolMOS P7 MOSFETs: Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

Market price

Part #	Mfg.	Description	Stock	Price
IPB60R180P7ATMA1 DISTI # V72:2272_18787578	Infineon Technologies AG	HIGH POWER_NEW	2000	1000:$1.3173 500:$1.4452 250:$1.6087 100:$1.8899 25:$2.1059 10:$2.3399 1:$3.4378
IPB60R180P7ATMA1 DISTI # V36:1790_18787578	Infineon Technologies AG	HIGH POWER_NEW	0
IPB60R180P7ATMA1 DISTI # IPB60R180P7ATMA1TR-ND	Infineon Technologies AG	MOSFET TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	5000:$1.1403 2000:$1.1546 1000:$1.2401
IPB60R180P7ATMA1 DISTI # IPB60R180P7ATMA1CT-ND	Infineon Technologies AG	MOSFET TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1000In Stock	500:$1.5416 100:$1.8763 10:$2.3340 1:$2.6000
IPB60R180P7ATMA1 DISTI # IPB60R180P7ATMA1DKR-ND	Infineon Technologies AG	MOSFET TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1000In Stock	500:$1.5416 100:$1.8763 10:$2.3340 1:$2.6000
IPB60R180P7ATMA1 DISTI # 33647293	Infineon Technologies AG	HIGH POWER_NEW	2000	1000:$1.3173 500:$1.4452 250:$1.6087 100:$1.8899 25:$2.1059 10:$2.3399 7:$3.4378
IPB60R180P7ATMA1 DISTI # 33655373	Infineon Technologies AG	HIGH POWER_NEW	1000	1000:$1.2217
IPB60R180P7ATMA1 DISTI # IPB60R180P7ATMA1	Infineon Technologies AG	HIGH POWER_NEW - Tape and Reel (Alt: IPB60R180P7ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$1.0339 6000:$1.0529 4000:$1.0899 2000:$1.1309 1000:$1.1729
IPB60R180P7ATMA1 DISTI # 49AC7997	Infineon Technologies AG	MOSFET, N-CH, 600V, 18A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.145ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	0	500:$1.4300 250:$1.5400 100:$1.6400 50:$1.7700 25:$1.9100 10:$2.0500 1:$2.4100
IPB60R180P7ATMA1 DISTI # 726-IPB60R180P7ATMA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	10000	1:$2.3900 10:$2.0300 100:$1.6200 500:$1.4200 1000:$1.1800
IPB60R180P7ATMA1 DISTI # 2841645	Infineon Technologies AG	MOSFET, N-CH, 600V, 18A, TO-263	0	500:£1.1000 250:£1.1800 100:£1.2600 10:£1.5900 1:£2.1100
IPB60R180P7ATMA1 DISTI # 2841645	Infineon Technologies AG	MOSFET, N-CH, 600V, 18A, TO-263 RoHS: Compliant	0	1000:$1.6300 500:$1.6700 250:$1.7600 100:$1.8600 10:$2.1000 1:$2.2500

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Availability

Stock:: Available
On Order:: 1992
Enter Quantity:

Current price of IPB60R180P7ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$2.39~~; ~~$2.39~~

10: ~~$2.03~~; ~~$20.30~~

100: ~~$1.62~~; ~~$162.00~~

500: ~~$1.42~~; ~~$710.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPB60R180P7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes