PartNumber | IPB60R360P7ATMA1 | IPB60R360CFD7ATMA1 | IPB60R330P6ATMA1 |
Description | MOSFET LOW POWER_NEW | MOSFET | MOSFET N-CH TO263-3 |
Manufacturer | Infineon | Infineon | Infineon Technologies |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 600 V | - | - |
Id Continuous Drain Current | 9 A | - | - |
Rds On Drain Source Resistance | 305 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 13 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 41 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | Reel | Reel |
Transistor Type | 1 N-Channel | - | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 10 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 7 ns | - | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 42 ns | - | - |
Typical Turn On Delay Time | 8 ns | - | - |
Part # Aliases | IPB60R360P7 SP001664948 | IPB60R360CFD7 SP002621072 | - |
Part Aliases | - | - | IPB60R330P6 SP001364470 |
Package Case | - | - | TO-263-3 |