IPB60R3

IPB60R360P7ATMA1 vs IPB60R360CFD7ATMA1 vs IPB60R330P6ATMA1

 
PartNumberIPB60R360P7ATMA1IPB60R360CFD7ATMA1IPB60R330P6ATMA1
DescriptionMOSFET LOW POWER_NEWMOSFETMOSFET N-CH TO263-3
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySi-Si
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current9 A--
Rds On Drain Source Resistance305 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge13 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation41 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelReelReel
Transistor Type1 N-Channel--
BrandInfineon TechnologiesInfineon Technologies-
Fall Time10 ns--
Product TypeMOSFETMOSFET-
Rise Time7 ns--
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time42 ns--
Typical Turn On Delay Time8 ns--
Part # AliasesIPB60R360P7 SP001664948IPB60R360CFD7 SP002621072-
Part Aliases--IPB60R330P6 SP001364470
Package Case--TO-263-3
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPB60R360P7ATMA1 MOSFET LOW POWER_NEW
IPB60R380C6 MOSFET N-Ch 600V 10.6A D2PAK-2 CoolMOS C6
IPB60R360CFD7ATMA1 MOSFET
IPB60R330P6ATMA1 MOSFET N-CH TO263-3
IPB60R360P7ATMA1 MOSFET TO263-3
IPB60R380P6ATMA1 MOSFET N-CH 600V TO263-3
IPB60R380C6ATMA1 MOSFET N-CH 600V 10.6A TO263
IPB60R385CPATMA1 MOSFET N-CH 600V 9A TO-263
Infineon Technologies
Infineon Technologies
IPB60R380C6ATMA1 MOSFET LOW POWER_LEGACY
IPB60R385CPATMA1 MOSFET LOW POWER_LEGACY
IPB60R380C6 MOSFET N-Ch 600V 10.6A D2PAK-2 CoolMOS C6
IPB60R380C6 . New and Original
IPB60R380C6 (6R380C6) New and Original
IPB60R380C6S New and Original
IPB60R385CP Trans MOSFET N-CH 650V 9A 3-Pin TO-263 T/R - Bulk (Alt: IPB60R385CP)
IPB60R385CPXT New and Original
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