IPB60R380

IPB60R380C6 vs IPB60R380C6ATMA1 vs IPB60R380P6ATMA1

 
PartNumberIPB60R380C6IPB60R380C6ATMA1IPB60R380P6ATMA1
DescriptionMOSFET N-Ch 600V 10.6A D2PAK-2 CoolMOS C6MOSFET LOW POWER_LEGACYMOSFET N-CH 600V TO263-3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current10.6 A--
Rds On Drain Source Resistance340 mOhms--
Vgs th Gate Source Threshold Voltage3.5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge32 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation83 W--
ConfigurationSingleSingle-
TradenameCoolMOSCoolMOS-
PackagingReelReel-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesCoolMOS C6--
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time9 ns--
Product TypeMOSFETMOSFET-
Rise Time10 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time110 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesIPB60R380C6ATMA1 IPB6R38C6XT SP000660634IPB60R380C6 IPB6R38C6XT SP000660634-
Unit Weight0.139332 oz0.139332 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPB60R380C6 MOSFET N-Ch 600V 10.6A D2PAK-2 CoolMOS C6
IPB60R380P6ATMA1 MOSFET N-CH 600V TO263-3
IPB60R380C6ATMA1 MOSFET N-CH 600V 10.6A TO263
Infineon Technologies
Infineon Technologies
IPB60R380C6ATMA1 MOSFET LOW POWER_LEGACY
IPB60R380C6 MOSFET N-Ch 600V 10.6A D2PAK-2 CoolMOS C6
IPB60R380C6 . New and Original
IPB60R380C6 (6R380C6) New and Original
IPB60R380C6S New and Original
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